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ChinaVS-GA200HS60S1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
VS-GA200HS60S1
BESCHREIBUNG
IGBT MOD 600V 480A INT-A-PAK
DETAILIERTE BESCHREIBUNG
IGBT Module Half Bridge 600 V 480 A 830 W Chassis Mount INT-A-PAK
HERSTELLER
Vishay General Semiconductor - Diodes Division
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay General Semiconductor - Diodes Division
Series
-
Package
Bulk
Product Status
Obsolete
IGBT Type
-
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
480 A
Power - Max
830 W
Vce(on) (Max) @ Vge, Ic
1.21V @ 15V, 200A
Current - Collector Cutoff (Max)
1 mA
Input Capacitance (Cies) @ Vce
32.5 nF @ 30 V
Input
Standard
NTC Thermistor
No
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
INT-A-Pak
Supplier Device Package
INT-A-PAK
Base Product Number
GA200
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Vishay General Semiconductor - Diodes Division VS-GA200HS60S1
Dokumente und Medien
HTML Datasheet
1(VS-GA200HS60S1PbF)
Menge Preis
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Stellvertreter
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