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ChinaFZ2400R12HP4B9NPSA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FZ2400R12HP4B9NPSA1
BESCHREIBUNG
INSULATED GATE BIPOLAR TRANSISTO
DETAILIERTE BESCHREIBUNG
IGBT Module Trench Single Switch 1200 V 3550 A 13500 W Chassis Mount AG-IHMB190
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Bulk
Product Status
Active
IGBT Type
Trench
Configuration
Single Switch
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
3550 A
Power - Max
13500 W
Vce(on) (Max) @ Vge, Ic
2.05V @ 15V, 2.4kA
Current - Collector Cutoff (Max)
5 mA
Input Capacitance (Cies) @ Vce
150 nF @ 25 V
Input
Standard
NTC Thermistor
No
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
AG-IHMB190
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-FZ2400R12HP4B9NPSA1
INFINFFZ2400R12HP4B9NPSA1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Infineon Technologies FZ2400R12HP4B9NPSA1
Dokumente und Medien
Datasheets
1(FZ2400R12HP4B9NPSA1 Datasheet)
Menge Preis
QUANTITÄT: 1
Einzelpreis: $938.76
Verpackung: Bulk
MinMultiplikator: 1
Verpackung: Bulk
MinMultiplikator: 1
Stellvertreter
-