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Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPW60R018CFD7XKSA1
BESCHREIBUNG
MOSFET N CH
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 101A (Tc) 416W (Tc) Through Hole PG-TO247-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
26 Weeks
EDACAD-MODELL
IPW60R018CFD7XKSA1 Models
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolMOS™ CFD7
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
101A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
18mOhm @ 58.2A, 10V
Vgs(th) (Max) @ Id
4.5V @ 2.91mA
Gate Charge (Qg) (Max) @ Vgs
251 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9901 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
416W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3
Package / Case
TO-247-3
Base Product Number
IPW60R018
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-IPW60R018CFD7XKSA1
SP001715618
448-IPW60R018CFD7XKSA1
IPW60R018CFD7XKSA1-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPW60R018CFD7XKSA1
Dokumente und Medien
Datasheets
1(IPW60R018CFD7)
Environmental Information
1(RoHS Certificate)
EDA Models
1(IPW60R018CFD7XKSA1 Models)
Menge Preis
QUANTITÄT: 510
Einzelpreis: $13.03465
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 120
Einzelpreis: $15.275
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 30
Einzelpreis: $16.29333
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $19.65
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
-