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ChinaIRF6711STRPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF6711STRPBF
BESCHREIBUNG
MOSFET N-CH 25V 19A DIRECTFET
DETAILIERTE BESCHREIBUNG
N-Channel 25 V 19A (Ta), 84A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SQ
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,800
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
19A (Ta), 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.8mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1810 pF @ 13 V
FET Feature
-
Power Dissipation (Max)
2.2W (Ta), 42W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ SQ
Package / Case
DirectFET™ Isometric SQ
Base Product Number
IRF6711
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
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Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6711STRPBF
Dokumente und Medien
Datasheets
1(IRF6711S(TR)PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
()
Environmental Information
1(RoHS Certificate)
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRF6711S(TR)PbF)
Simulation Models
1(IRF6711STR1PBF Saber Model)
Menge Preis
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Stellvertreter
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