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ChinaRJK0329DPB-01#J0
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RJK0329DPB-01#J0
BESCHREIBUNG
MOSFET N-CH 30V 55A LFPAK
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 55A (Ta) 60W (Tc) Surface Mount LFPAK
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
286
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
55A (Ta)
Rds On (Max) @ Id, Vgs
2.3mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
5330 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
LFPAK
Package / Case
SC-100, SOT-669
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-RJK0329DPB-01#J0-RETR
RENRNSRJK0329DPB-01#J0
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation RJK0329DPB-01#J0
Dokumente und Medien
Datasheets
1(RJK0329DPB-01#J0)
Menge Preis
QUANTITÄT: 286
Einzelpreis: $1.05
Verpackung: Bulk
MinMultiplikator: 286
Verpackung: Bulk
MinMultiplikator: 286
Stellvertreter
-