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ChinaBSM300D12P3E005
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSM300D12P3E005
BESCHREIBUNG
SIC 2N-CH 1200V 300A MODULE
DETAILIERTE BESCHREIBUNG
Mosfet Array 1200V (1.2kV) 300A (Tc) 1260W (Tc) Chassis Mount Module
HERSTELLER
Rohm Semiconductor
STANDARD LEADTIME
19 Weeks
EDACAD-MODELL
STANDARDPAKET
4
Lagerbestände
Technische Daten
Mfr
Rohm Semiconductor
Series
-
Package
Bulk
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
300A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
5.6V @ 91mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
14000pF @ 10V
Power - Max
1260W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
BSM300
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Rohm Semiconductor BSM300D12P3E005
Dokumente und Medien
Datasheets
1(BSM300D12P3E005)
Product Training Modules
()
Video File
()
Featured Product
1(SiC Schottky Barrier Diodes)
Menge Preis
QUANTITÄT: 1
Einzelpreis: $1407.31
Verpackung: Bulk
MinMultiplikator: 1
Verpackung: Bulk
MinMultiplikator: 1
Stellvertreter
-