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ChinaBC53PAS115
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TEILNUMMER DES HERSTELLERS
BC53PAS115
BESCHREIBUNG
SMALL SIGNAL BIPOLAR TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 80 V 1 A 145MHz 420 mW Surface Mount DFN2020D-3
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,768
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA, 2V
Power - Max
420 mW
Frequency - Transition
145MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
3-PowerUDFN
Supplier Device Package
DFN2020D-3
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2156-BC53PAS115
NEXNXPBC53PAS115
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NXP USA Inc. BC53PAS115
Dokumente und Medien
Datasheets
1(BC52-16PAS115 Datasheet)
HTML Datasheet
1(BC52-16PAS115 Datasheet)
Menge Preis
-
Stellvertreter
-