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ChinaFCH110N65F-F155
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FCH110N65F-F155
BESCHREIBUNG
MOSFET N-CH 650V 35A TO247
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 35A (Tc) 357W (Tc) Through Hole TO-247-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
69
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
FRFET®, SuperFET® II
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
110mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id
5V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs
145 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4895 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
357W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-FCH110N65F-F155
ONSFSCFCH110N65F-F155
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FCH110N65F-F155
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 69
Einzelpreis: $4.53
Verpackung: Bulk
MinMultiplikator: 69
Verpackung: Bulk
MinMultiplikator: 69
Stellvertreter
-