Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
FQD6N25TM
BESCHREIBUNG
MOSFET N-CH 250V 4.4A DPAK
DETAILIERTE BESCHREIBUNG
N-Channel 250 V 4.4A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount TO-252AA
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
FQD6N25TM Models
STANDARDPAKET
2,500

Technische Daten

Mfr
onsemi
Series
QFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.5 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 45W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
FQD6N25

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

FQD6N25TMFSCT
FQD6N25TMFSTR
FQD6N25TMFSDKR
FQD6N25TM-ND

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQD6N25TM

Dokumente und Medien

Datasheets
1(FQD6N25)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 30/Jun/2022)
PCN Design/Specification
()
PCN Assembly/Origin
1(Mult Dev 13/Aug/2020)
PCN Packaging
1(Mult Devices 24/Oct/2017)
EDA Models
1(FQD6N25TM Models)

Menge Preis

-

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