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ChinaBSM600C12P3G201
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSM600C12P3G201
BESCHREIBUNG
SICFET N-CH 1200V 600A MODULE
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 600A (Tc) 2460W (Tc) Chassis Mount Module
HERSTELLER
Rohm Semiconductor
STANDARD LEADTIME
19 Weeks
EDACAD-MODELL
BSM600C12P3G201 Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Rohm Semiconductor
Series
-
Package
Tray
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
600A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
5.6V @ 182mA
Vgs (Max)
+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds
28000 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
2460W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
Module
Package / Case
Module
Base Product Number
BSM600
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Rohm Semiconductor BSM600C12P3G201
Dokumente und Medien
Datasheets
1(BSM600C12P3G201)
Product Training Modules
()
Video File
()
Featured Product
()
EDA Models
1(BSM600C12P3G201 Models)
Menge Preis
QUANTITÄT: 4
Einzelpreis: $1250.785
Verpackung: Tray
MinMultiplikator: 4
Verpackung: Tray
MinMultiplikator: 4
Stellvertreter
-