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ChinaMMBT5551LT1H
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
MMBT5551LT1H
BESCHREIBUNG
SS SOT23 HV XSTR NPN 160V
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 160 V 600 mA 225 mW Surface Mount SOT-23-3 (TO-236)
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
MMBT5551LT1H Models
STANDARDPAKET
11,539
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
600 mA
Voltage - Collector Emitter Breakdown (Max)
160 V
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Power - Max
225 mW
Frequency - Transition
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
2156-MMBT5551LT1H
ONSONSMMBT5551LT1H
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi MMBT5551LT1H
Dokumente und Medien
Datasheets
1(MMBT5551LT1G Datasheet)
EDA Models
1(MMBT5551LT1H Models)
Menge Preis
QUANTITÄT: 11539
Einzelpreis: $0.03
Verpackung: Bulk
MinMultiplikator: 11539
Verpackung: Bulk
MinMultiplikator: 11539
Stellvertreter
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