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ChinaSI8475EDB-T1-E1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI8475EDB-T1-E1
BESCHREIBUNG
MOSFET P-CH 20V 4MICROFOOT
DETAILIERTE BESCHREIBUNG
P-Channel 20 V 4.9A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
4.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
32mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Vgs (Max)
±12V
FET Feature
-
Power Dissipation (Max)
1.1W (Ta), 2.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-Microfoot
Package / Case
4-XFBGA, CSPBGA
Base Product Number
SI8475
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SI8475EDB-T1-E1CT
SI8475EDB-T1-E1TR
SI8475EDBT1E1
SI8475EDB-T1-E1DKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI8475EDB-T1-E1
Dokumente und Medien
Datasheets
1(SI8475EDB)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 14/Mar/2018)
HTML Datasheet
1(SI8475EDB)
Menge Preis
-
Stellvertreter
-