Mfr
Renesas Electronics Corporation
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
10A
Rds On (Max) @ Id, Vgs
12.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs
42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
2200pF @ 10V
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerSOIC (0.173", 4.40mm Width)
Supplier Device Package
8-SOP
Base Product Number
UPA2792