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ChinaSTD1NK80Z-1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
STD1NK80Z-1
BESCHREIBUNG
MOSFET N-CH 800V 1A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 800 V 1A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
75
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
SuperMESH™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
16Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
7.7 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
160 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
45W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251 (IPAK)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
STD1NK80
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
497-16198-5
STD1NK80Z-1-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STD1NK80Z-1
Dokumente und Medien
Datasheets
1(STx1NK80ZR(R-AP,-1))
Product Training Modules
1(STMicroelectronics ST MOSFETs)
PCN Obsolescence/ EOL
1(Mult Dev OBS 3/Jul/2020)
PCN Packaging
1(Box Label Chg 28/Jul/2016)
HTML Datasheet
1(STx1NK80ZR(R-AP,-1))
Menge Preis
-
Stellvertreter
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