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ChinaIXRFSM12N100
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXRFSM12N100
BESCHREIBUNG
MOSFET N-CH 1000V 12A 16SMPD
DETAILIERTE BESCHREIBUNG
N-Channel 1000 V 12A (Tc) 940W Surface Mount 16-SMPD
HERSTELLER
IXYS-RF
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
IXYS-RF
Series
SMPD
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
1.05Ohm @ 6A, 15V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
77 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2875 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
940W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
16-SMPD
Package / Case
16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad
Base Product Number
IXRFSM12
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS-RF IXRFSM12N100
Dokumente und Medien
Featured Product
1(RF Power MOSFETs – SMPD Series)
PCN Obsolescence/ EOL
1(Mult Dev EOL 18/Jan/2019)
Menge Preis
-
Stellvertreter
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