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ChinaIRLU8726PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRLU8726PBF
BESCHREIBUNG
MOSFET N-CH 30V 86A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 86A (Tc) 75W (Tc) Through Hole I-PAK
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
75
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
86A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2150 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
75W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRLU8726PBF
Dokumente und Medien
Datasheets
1(IRL(R,U)8726PbF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
()
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRL(R,U)8726PbF)
Simulation Models
1(IRLR8726PBF Saber Model)
Menge Preis
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Stellvertreter
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