Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IPL65R650C6SATMA1
BESCHREIBUNG
MOSFET N-CH 650V 6.7A THIN-PAK
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 6.7A (Tc) 56.8W (Tc) Surface Mount PG-TSON-8-2
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
5,000

Technische Daten

Mfr
Infineon Technologies
Series
CoolMOS™ C6
Package
Tape & Reel (TR)
Product Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
56.8W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TSON-8-2
Package / Case
8-PowerTDFN
Base Product Number
IPL65R650

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

SP001163082
2156-IPL65R650C6SATMA1
INFINFIPL65R650C6SATMA1

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPL65R650C6SATMA1

Dokumente und Medien

Datasheets
1(IPL65R650C6S)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPL65R650C6S)

Menge Preis

QUANTITÄT: 10000
Einzelpreis: $0.6985
Verpackung: Tape & Reel (TR)
MinMultiplikator: 5000
QUANTITÄT: 5000
Einzelpreis: $0.72242
Verpackung: Tape & Reel (TR)
MinMultiplikator: 5000

Stellvertreter

Teil Nr. : GC11N65D5
Hersteller. : Goford Semiconductor
Verfügbare Menge. : 0
Einzelpreis. : $1.67000
Ersatztyp. : Similar