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ChinaMB85R256GPF-G-BNDE1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
MB85R256GPF-G-BNDE1
BESCHREIBUNG
IC FRAM 256KBIT PARALLEL
DETAILIERTE BESCHREIBUNG
FRAM (Ferroelectric RAM) Memory IC 256Kbit Parallel 150 ns
HERSTELLER
Fujitsu Semiconductor Memory Solution
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Fujitsu Semiconductor Memory Solution
Series
-
Package
Tray
Product Status
Obsolete
allaboutcomponents.com Programmable
Not Verified
Memory Type
Non-Volatile
Memory Format
FRAM
Technology
FRAM (Ferroelectric RAM)
Memory Size
256Kbit
Memory Organization
32K x 8
Memory Interface
Parallel
Write Cycle Time - Word, Page
150ns
Access Time
150 ns
Voltage - Supply
2.7V ~ 3.6V
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
-
Package / Case
-
Supplier Device Package
-
Base Product Number
MB85R256
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN
OBSOLETE
HTSUS
0000.00.0000
Andere Namen
-
Kategorie
/Product Index/Integrated Circuits (ICs)/Memory/Memory/Fujitsu Semiconductor Memory Solution MB85R256GPF-G-BNDE1
Dokumente und Medien
Video File
1(Kaga FEI America Introduction of FRAM Usage)
PCN Packaging
1(Interior Box 14/Apr/2023)
Menge Preis
-
Stellvertreter
-