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ChinaIRFHM4226TRPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFHM4226TRPBF
BESCHREIBUNG
MOSFET N CH 25V 28A PQFN
DETAILIERTE BESCHREIBUNG
N-Channel 25 V 28A (Ta) 2.7W (Ta), 39W (Tc) Surface Mount
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
28A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 13 V
FET Feature
-
Power Dissipation (Max)
2.7W (Ta), 39W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-TQFN Exposed Pad
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IRFHM4226TRPBFCT
IRFHM4226TRPBFTR
SP001556568
IRFHM4226TRPBFDKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFHM4226TRPBF
Dokumente und Medien
Datasheets
1(IRFHM4226TRPbF)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
()
PCN Packaging
()
HTML Datasheet
1(IRFHM4226TRPbF)
Menge Preis
-
Stellvertreter
Teil Nr. : BSZ0901NSIATMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 5,318
Einzelpreis. : $1.47000
Ersatztyp. : Similar
Verfügbare Menge. : 5,318
Einzelpreis. : $1.47000
Ersatztyp. : Similar