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ChinaBSP123E6327T
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSP123E6327T
BESCHREIBUNG
MOSFET N-CH 100V 370MA SOT223-4
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 370mA (Ta) 1.79W (Ta) Surface Mount PG-SOT223-4
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
370mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.8V, 10V
Rds On (Max) @ Id, Vgs
6Ohm @ 370mA, 10V
Vgs(th) (Max) @ Id
1.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
2.4 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
70 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.79W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223-4
Package / Case
TO-261-4, TO-261AA
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
BSP123XTINCT
BSP123XTINTR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSP123E6327T
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Menge Preis
-
Stellvertreter
Teil Nr. : BSP89,115
Hersteller. : Nexperia USA Inc.
Verfügbare Menge. : 11,928
Einzelpreis. : $0.56000
Ersatztyp. : Similar
Verfügbare Menge. : 11,928
Einzelpreis. : $0.56000
Ersatztyp. : Similar