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ChinaSIHU5N50D-E3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIHU5N50D-E3
BESCHREIBUNG
MOSFET N-CH 500V 5.3A TO251AA
DETAILIERTE BESCHREIBUNG
N-Channel 500 V 5.3A (Tc) 104W (Tc) Through Hole TO-251AA
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
8 Weeks
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
325 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251AA
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
SIHU5
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SIHU5N50D-E3CT-ND
SIHU5N50D-E3CT
SIHU5N50DE3
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHU5N50D-E3
Dokumente und Medien
Datasheets
1(SIHU5N50D)
PCN Assembly/Origin
1(IRFU/SIH 21/Oct/2016)
HTML Datasheet
1(SIHU5N50D)
Menge Preis
QUANTITÄT: 3000
Einzelpreis: $0.48763
Verpackung: Tube
MinMultiplikator: 3000
Verpackung: Tube
MinMultiplikator: 3000
Stellvertreter
-