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ChinaUF3SC065030D8S
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
UF3SC065030D8S
BESCHREIBUNG
SICFET N-CH 650V 18A 4DFN
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 18A (Tc) 179W (Tc) Surface Mount 4-DFN (8x8)
HERSTELLER
Qorvo
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
Qorvo
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V
Rds On (Max) @ Id, Vgs
42mOhm @ 20A, 12V
Vgs(th) (Max) @ Id
6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 12 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
179W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-DFN (8x8)
Package / Case
4-PowerTSFN
Base Product Number
UF3SC065030
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2312-UF3SC065030D8SDKR
2312-UF3SC065030D8STR
2312-UF3SC065030D8SCT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Qorvo UF3SC065030D8S
Dokumente und Medien
Datasheets
1(UF3SC065030D8S)
Video File
1(Minimizing EMI and switching loss for SiC FETs)
Environmental Information
()
PCN Obsolescence/ EOL
1(UF3SC0650 08/Sep/2021)
PCN Assembly/Origin
1(UF3SC065 A/T Chg 11/Jun/2021)
HTML Datasheet
1(UF3SC065030D8S)
Menge Preis
-
Stellvertreter
-