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ChinaBSC882N03LS G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSC882N03LS G
BESCHREIBUNG
N-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 34 V Surface Mount PG-TDSON-8-6
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
702
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™3 M
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
34 V
Current - Continuous Drain (Id) @ 25°C
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3700 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-6
Package / Case
8-PowerTDFN
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-BSC882N03LS G
IFEINFBSC882N03LS G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSC882N03LS G
Dokumente und Medien
Datasheets
1(BSC882N03LSGATMA1 Datasheet)
Menge Preis
QUANTITÄT: 702
Einzelpreis: $0.43
Verpackung: Bulk
MinMultiplikator: 702
Verpackung: Bulk
MinMultiplikator: 702
Stellvertreter
-