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ChinaIRG8P50N120KD-EPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRG8P50N120KD-EPBF
BESCHREIBUNG
IRG8P50N120 - DISCRETE IGBT WITH
DETAILIERTE BESCHREIBUNG
IGBT 1200 V 80 A 350 W Through Hole TO-247AD
HERSTELLER
International Rectifier
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
43
Lagerbestände
Technische Daten
Mfr
International Rectifier
Series
-
Package
Bulk
Product Status
Obsolete
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
80 A
Current - Collector Pulsed (Icm)
105 A
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 35A
Power - Max
350 W
Switching Energy
2.3mJ (on), 1.9mJ (off)
Input Type
Standard
Gate Charge
315 nC
Td (on/off) @ 25°C
35ns/190ns
Test Condition
600V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr)
170 ns
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247AD
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
2156-IRG8P50N120KD-EPBF
INFIRFIRG8P50N120KD-EPBF
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/International Rectifier IRG8P50N120KD-EPBF
Dokumente und Medien
Datasheets
1(IRG8P50N120KDPBF)
Menge Preis
QUANTITÄT: 43
Einzelpreis: $7.04
Verpackung: Bulk
MinMultiplikator: 43
Verpackung: Bulk
MinMultiplikator: 43
Stellvertreter
-