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ChinaSI3443DVTR
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TEILNUMMER DES HERSTELLERS
SI3443DVTR
BESCHREIBUNG
MOSFET P-CH 20V 4.4A 6-TSOP
DETAILIERTE BESCHREIBUNG
P-Channel 20 V 4.4A (Ta) Surface Mount Micro6™(TSOP-6)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
4.4A (Ta)
Rds On (Max) @ Id, Vgs
65mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
1079 pF @ 10 V
FET Feature
-
Mounting Type
Surface Mount
Supplier Device Package
Micro6™(TSOP-6)
Package / Case
SOT-23-6 Thin, TSOT-23-6
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
*SI3443DVTR
SI3443DVCT
SP001578168
=94-3375
SI3443DVDKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SI3443DVTR
Dokumente und Medien
Datasheets
1(Si3443DV)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
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HTML Datasheet
1(Si3443DV)
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