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ChinaFQP17N08L
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQP17N08L
BESCHREIBUNG
MOSFET N-CH 80V 16.5A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 80 V 16.5A (Tc) 65W (Tc) Through Hole TO-220-3
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
FQP17N08L Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
16.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
100mOhm @ 8.25A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11.5 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
520 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
65W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
FQP1
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQP17N08L
Dokumente und Medien
Datasheets
1(FQP17N08L)
Environmental Information
1(onsemi RoHS)
HTML Datasheet
()
EDA Models
1(FQP17N08L Models)
Product Drawings
1(TO220B03 Pkg Drawing)
Menge Preis
-
Stellvertreter
-