Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IMZ120R030M1HXKSA1
BESCHREIBUNG
SICFET N-CH 1.2KV 56A TO247-4
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 56A (Tc) 227W (Tc) Through Hole PG-TO247-4-1
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
99 Weeks
EDACAD-MODELL
IMZ120R030M1HXKSA1 Models
STANDARDPAKET
30

Technische Daten

Mfr
Infineon Technologies
Series
CoolSiC™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
40mOhm @ 25A, 18V
Vgs(th) (Max) @ Id
5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 18 V
Vgs (Max)
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
2120 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
227W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4-1
Package / Case
TO-247-4
Base Product Number
IMZ120

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

448-IMZ120R030M1HXKSA1
IMZ120R030M1HXKSA1-ND
SP001727394

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IMZ120R030M1HXKSA1

Dokumente und Medien

Datasheets
1(IMZ120R030M1H)
Environmental Information
1(RoHS Certificate)
Featured Product
1(Silicon Carbide CoolSiC™ MOSFETs and Diodes)
HTML Datasheet
1(IMZ120R030M1H)
EDA Models
1(IMZ120R030M1HXKSA1 Models)

Menge Preis

QUANTITÄT: 510
Einzelpreis: $14.65867
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 120
Einzelpreis: $17.17817
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 30
Einzelpreis: $18.32333
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $22.1
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

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