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ChinaBD435STU
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TEILNUMMER DES HERSTELLERS
BD435STU
BESCHREIBUNG
TRANS NPN 32V 4A TO126-3
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 32 V 4 A 3MHz 36 W Through Hole TO-126-3
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
BD435STU Models
STANDARDPAKET
1,920
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
32 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Current - Collector Cutoff (Max)
100µA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA, 5V
Power - Max
36 W
Frequency - Transition
3MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126-3
Base Product Number
BD435
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi BD435STU
Dokumente und Medien
Datasheets
1(BD433/435/437)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 16/Jul/2019)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(Mult Devices Mold change 19/Mar/2019)
PCN Packaging
1(Mult Devices 24/Oct/2017)
EDA Models
1(BD435STU Models)
Menge Preis
-
Stellvertreter
-