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ChinaESM2012DV
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
ESM2012DV
BESCHREIBUNG
TRANS NPN DARL 120V 120A ISOTOP
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN - Darlington 120 V 120 A 175 W Chassis Mount ISOTOP®
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
-
Package
Tube
Product Status
Obsolete
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
120 A
Voltage - Collector Emitter Breakdown (Max)
120 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1A, 100A
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
1200 @ 100A, 5V
Power - Max
175 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Supplier Device Package
ISOTOP®
Base Product Number
ESM2012
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/STMicroelectronics ESM2012DV
Dokumente und Medien
Datasheets
1(ESM2012DV)
HTML Datasheet
1(ESM2012DV)
Menge Preis
-
Stellvertreter
-