Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
STB6N65M2
BESCHREIBUNG
MOSFET N-CH 650V 4A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 4A (Tc) 60W (Tc) Surface Mount TO-263 (D2PAK)
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STB6N65M2 Models
STANDARDPAKET
1,000

Technische Daten

Mfr
STMicroelectronics
Series
MDmesh™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.35Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.8 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
226 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
STB6N

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-497-15047-6
497-15047-6
-497-15047-1
-497-15047-2
497-15047-1
497-15047-2

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STB6N65M2

Dokumente und Medien

Datasheets
1(STB6N65M2, STD6N65M2)
Product Training Modules
1(STMicroelectronics ST MOSFETs)
PCN Obsolescence/ EOL
1(Mult Dev OBS 3/Jul/2020)
PCN Assembly/Origin
1(Mult Dev Wafer Site Add 3/Aug/2018)
HTML Datasheet
1(STB6N65M2, STD6N65M2)
EDA Models
1(STB6N65M2 Models)

Menge Preis

QUANTITÄT: 1
Einzelpreis: $1.38
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $1.38
Verpackung: Digi-Reel®
MinMultiplikator: 1

Stellvertreter

Teil Nr. : IXFA7N80P
Hersteller. : IXYS
Verfügbare Menge. : 257
Einzelpreis. : $3.81000
Ersatztyp. : Similar