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ChinaNVH4L020N120SC1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NVH4L020N120SC1
BESCHREIBUNG
SICFET N-CH 1200V 102A TO247
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 102A (Tc) 510W (Tc) Through Hole TO-247-4L
HERSTELLER
onsemi
STANDARD LEADTIME
6 Weeks
EDACAD-MODELL
NVH4L020N120SC1 Models
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
102A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id
4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
220 nC @ 20 V
Vgs (Max)
+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds
2943 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
510W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4
Base Product Number
NVH4L020
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NVH4L020N120SC1
Dokumente und Medien
Datasheets
1(NVH4L020N120SC1)
Environmental Information
()
PCN Packaging
1(Packing quantity increase 25/Jun/2021)
HTML Datasheet
1(NVH4L020N120SC1)
EDA Models
1(NVH4L020N120SC1 Models)
Menge Preis
QUANTITÄT: 120
Einzelpreis: $67.70933
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 30
Einzelpreis: $71.41233
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $81.99
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
-