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ChinaDTC143ESATP
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
DTC143ESATP
BESCHREIBUNG
TRANS PREBIAS NPN 50V 0.1A SPT
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 300 mW Through Hole SPT
HERSTELLER
Rohm Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Rohm Semiconductor
Series
-
Package
Tape & Box (TB)
Product Status
Obsolete
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
4.7 kOhms
Resistor - Emitter Base (R2)
4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
250 MHz
Power - Max
300 mW
Mounting Type
Through Hole
Package / Case
SC-72 Formed Leads
Supplier Device Package
SPT
Base Product Number
DTC143
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Rohm Semiconductor DTC143ESATP
Dokumente und Medien
Datasheets
1(DTC143Ex(A))
HTML Datasheet
1(DTC143Ex(A))
Menge Preis
-
Stellvertreter
-