English
Spain
Rusia
Italy
ChinaSPD30N03S2L-20
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SPD30N03S2L-20
BESCHREIBUNG
MOSFET N-CH 30V 30A TO252-3
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 30A (Tc) 60W (Tc) Surface Mount PG-TO252-3-11
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
20mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
2V @ 23µA
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-11
Package / Case
-
Base Product Number
SPD30N
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SPD30N03S2L20INTR
SP000013488
SPD30N03S2L20XT-ND
SPD30N03S2L20INCT
SPD30N03S2L20BUMA1
SPD30N03S2L20XT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPD30N03S2L-20
Dokumente und Medien
Datasheets
1(SPD30N03S2L-20)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(SPD30N03S2L-20)
Menge Preis
-
Stellvertreter
Teil Nr. : DMG4800LK3-13
Hersteller. : Diodes Incorporated
Verfügbare Menge. : 6,900
Einzelpreis. : $0.58000
Ersatztyp. : Similar
Verfügbare Menge. : 6,900
Einzelpreis. : $0.58000
Ersatztyp. : Similar