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ChinaFDPF12N35
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDPF12N35
BESCHREIBUNG
MOSFET N-CH 350V 12A TO220F
DETAILIERTE BESCHREIBUNG
N-Channel 350 V 12A (Tc) 31.3W (Tc) Through Hole TO-220F-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
523
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
UniFET™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
350 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1110 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
31.3W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FAIFSCFDPF12N35
2156-FDPF12N35-FS
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDPF12N35
Dokumente und Medien
Datasheets
1(FDPF12N35)
Menge Preis
QUANTITÄT: 523
Einzelpreis: $0.57
Verpackung: Tube
MinMultiplikator: 523
Verpackung: Tube
MinMultiplikator: 523
Stellvertreter
-