Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
RF1S42N03L
BESCHREIBUNG
42A, 30V, 0.025 OHMS, N-CHANNEL
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 42A (Tc) 90W (Tc) Through Hole TO-262 (I2PAK)
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
400

Technische Daten

Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
25mOhm @ 42A, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
1650 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
90W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA

Umweltverträgliche Exportklassifikationen

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
0000.00.0000

Andere Namen

HARHARRF1S42N03L
2156-RF1S42N03L

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation RF1S42N03L

Dokumente und Medien

Datasheets
1(RFP42N03L)

Menge Preis

QUANTITÄT: 400
Einzelpreis: $0.87
Verpackung: Bulk
MinMultiplikator: 400

Stellvertreter

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