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ChinaJANTXV2N6251
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
JANTXV2N6251
BESCHREIBUNG
TRANS NPN 350V 0.001A TO3
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 350 V 1 mA 5.5 W Through Hole TO-3
HERSTELLER
Microchip Technology
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Microchip Technology
Series
Military, MIL-PRF-19500/510
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 mA
Voltage - Collector Emitter Breakdown (Max)
350 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1.67A, 10A
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
6 @ 10A, 3V
Power - Max
5.5 W
Frequency - Transition
-
Operating Temperature
-65°C ~ 200°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Supplier Device Package
TO-3
Umweltverträgliche Exportklassifikationen
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Microchip Technology JANTXV2N6251
Dokumente und Medien
Environmental Information
()
PCN Assembly/Origin
1(Manufacturing Change 23/Feb/2021)
Menge Preis
-
Stellvertreter
-