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ChinaHN4B04J(TE85L,F)
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TEILNUMMER DES HERSTELLERS
HN4B04J(TE85L,F)
BESCHREIBUNG
TRANS NPN/PNP 30V 0.5A SMV
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor Array NPN, PNP 30V 500mA 200MHz 300mW Surface Mount SMV
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
NPN, PNP
Current - Collector (Ic) (Max)
500mA
Voltage - Collector Emitter Breakdown (Max)
30V
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 100mA, 1V
Power - Max
300mW
Frequency - Transition
200MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-74A, SOT-753
Supplier Device Package
SMV
Base Product Number
HN4B04
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
HN4B04JTE85LF
HN4B04J(TE85LF)CT
HN4B04J(TE85LF)DKR
HN4B04J(TE85LF)TR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/Toshiba Semiconductor and Storage HN4B04J(TE85L,F)
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