English
Spain
Rusia
Italy
ChinaIRF6620TR1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF6620TR1
BESCHREIBUNG
MOSFET N-CH 20V 27A DIRECTFET
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 27A (Ta), 150A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
27A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 27A, 10V
Vgs(th) (Max) @ Id
2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4130 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MX
Package / Case
DirectFET™ Isometric MX
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6620TR1
Dokumente und Medien
Datasheets
1(IRF6620)
Other Related Documents
()
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRF6620)
Menge Preis
-
Stellvertreter
Teil Nr. : IRF6620TRPBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 9
Einzelpreis. : $1.58000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 9
Einzelpreis. : $1.58000
Ersatztyp. : Parametric Equivalent