Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
NVD5806NT4G
BESCHREIBUNG
MOSFET N-CH 40V 33A DPAK
DETAILIERTE BESCHREIBUNG
N-Channel 40 V 33A (Tc) 40W (Tc) Surface Mount DPAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
NVD5806NT4G Models
STANDARDPAKET
2,500

Technische Daten

Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
19mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
860 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
40W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
NVD580

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

ONSONSNVD5806NT4G
SVD5806NT4G
SVD5806NT4GOSTR
NVD5806NT4G-ND
SVD5806NT4GOSDKR
NVD5806NT4GOSCT
SVD5806NT4GOSTR-ND
SVD5806NT4GOSDKR-ND
SVD5806NT4G-ND
SVD5806NT4GOSCT-ND
NVD5806NT4GOSDKR
NVD5806NT4GOSTR
SVD5806NT4GOSCT
2156-NVD5806NT4G

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NVD5806NT4G

Dokumente und Medien

Datasheets
1(N(T,V)D5806N)
Environmental Information
()
PCN Obsolescence/ EOL
()
PCN Design/Specification
()
PCN Assembly/Origin
1(Multi Devices 06/Jun/2017)
HTML Datasheet
1(N(T,V)D5806N)
EDA Models
1(NVD5806NT4G Models)

Menge Preis

-

Stellvertreter

Teil Nr. : NVD5C486NLT4G
Hersteller. : onsemi
Verfügbare Menge. : 2,465
Einzelpreis. : $1.58000
Ersatztyp. : Similar
Teil Nr. : NVD5C486NT4G
Hersteller. : onsemi
Verfügbare Menge. : 10,000
Einzelpreis. : $1.58000
Ersatztyp. : Similar