Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
33A
Voltage - Forward (Vf) (Max) @ If
1.8 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
250 µA @ 1200 V
Capacitance @ Vr, F
754pF @ 0V, 1MHz
Mounting Type
Through Hole
Supplier Device Package
TO-220-2
Operating Temperature - Junction
-55°C ~ 175°C
Base Product Number
C4D10120