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TEILNUMMER DES HERSTELLERS
IPI037N08N3GXKSA1
BESCHREIBUNG
MOSFET N-CH 80V 100A TO262-3
DETAILIERTE BESCHREIBUNG
N-Channel 80 V 100A (Tc) 214W (Tc) Through Hole PG-TO262-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
3.75mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.5V @ 155µA
Gate Charge (Qg) (Max) @ Vgs
117 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8110 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
214W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI037N
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-IPI037N08N3GXKSA1
IFEINFIPI037N08N3GXKSA1
SP000680654
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI037N08N3GXKSA1
Dokumente und Medien
Datasheets
1(IPP037N08N3, IPI037N08N3, IPB035N08N3 G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPP037N08N3, IPI037N08N3, IPB035N08N3 G)
Simulation Models
1(MOSFET OptiMOS™ 80V N-Channel Spice Model)
Menge Preis
-
Stellvertreter
Teil Nr. : IPI045N10N3GXKSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 469
Einzelpreis. : $3.76000
Ersatztyp. : Similar
Verfügbare Menge. : 469
Einzelpreis. : $3.76000
Ersatztyp. : Similar