English
Spain
Rusia
Italy
ChinaSIB410DK-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIB410DK-T1-GE3
BESCHREIBUNG
MOSFET N-CH 30V 9A PPAK SC75-6
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 9A (Tc) 2.5W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
42mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 8 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
560 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 13W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SC-75-6
Package / Case
PowerPAK® SC-75-6
Base Product Number
SIB410
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SIB410DK-T1-GE3CT
SIB410DK-T1-GE3TR
SIB410DK-T1-GE3DKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIB410DK-T1-GE3
Dokumente und Medien
Datasheets
1(SIB410DK)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 30/Aug/2018)
HTML Datasheet
1(SIB410DK)
Menge Preis
-
Stellvertreter
-