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ChinaSIHH28N60E-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIHH28N60E-T1-GE3
BESCHREIBUNG
MOSFET N-CH 600V 29A PPAK 8 X 8
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 29A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
28 Weeks
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
E
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
98mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
129 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2614 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
202W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 8 x 8
Package / Case
8-PowerTDFN
Base Product Number
SIHH28
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SIHH28N60E-T1-GE3CT-ND
SIHH28N60E-T1-GE3TR
SIHH28N60E-T1-GE3TR-ND
SIHH28N60E-T1-GE3DKRINACTIVE
SIHH28N60E-T1-GE3CT
SIHH28N60E-T1-GE3TRINACTIVE
SIHH28N60E-T1-GE3DKR
SIHH28N60E-T1-GE3DKR-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHH28N60E-T1-GE3
Dokumente und Medien
Datasheets
1(SIHH28N60E)
HTML Datasheet
1(SIHH28N60E)
Menge Preis
QUANTITÄT: 3000
Einzelpreis: $2.98885
Verpackung: Bulk
MinMultiplikator: 3000
Verpackung: Bulk
MinMultiplikator: 3000
Stellvertreter
-