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ChinaRP1E100XNTR
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RP1E100XNTR
BESCHREIBUNG
MOSFET N-CH 30V 10A MPT6
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 10A (Ta) 2W (Ta) Surface Mount MPT6
HERSTELLER
Rohm Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Rohm Semiconductor
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
2W (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
MPT6
Package / Case
6-SMD, Flat Leads
Base Product Number
RP1E0100
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
RP1E100XNCT
RP1E100XNTRCT
RP1E100XNTRCT-ND
RP1E100XNTRDKR
RP1E100XNDKR
RP1E100XNTRDKR-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Rohm Semiconductor RP1E100XNTR
Dokumente und Medien
Datasheets
1(RP1E100XN)
HTML Datasheet
1(RP1E100XN)
Menge Preis
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Stellvertreter
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