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ChinaIRFP250
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFP250
BESCHREIBUNG
MOSFET N-CH 200V 33A TO247-3
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 33A (Tc) 180W (Tc) Through Hole TO-247-3
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
PowerMESH™ II
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
158 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2850 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
180W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
IRFP
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics IRFP250
Dokumente und Medien
Datasheets
1(IRFP250)
HTML Datasheet
1(IRFP250)
Menge Preis
-
Stellvertreter
Teil Nr. : IRFP250PBF
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 115
Einzelpreis. : $3.80000
Ersatztyp. : Similar
Verfügbare Menge. : 115
Einzelpreis. : $3.80000
Ersatztyp. : Similar