English
Spain
Rusia
Italy
ChinaIRF6614TRPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF6614TRPBF
BESCHREIBUNG
MOSFET N-CH 40V 12.7A DIRECTFET
DETAILIERTE BESCHREIBUNG
N-Channel 40 V 12.7A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,800
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
12.7A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.3mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id
2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2560 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
2.1W (Ta), 42W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ ST
Package / Case
DirectFET™ Isometric ST
Base Product Number
IRF6614
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SP001527924
IRF6614TRPBFDKR
IRF6614TRPBFCT
IRF6614TRPBFTR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6614TRPBF
Dokumente und Medien
Datasheets
1(IRF6614(TR)PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
()
Featured Product
1(Data Processing Systems)
PCN Design/Specification
1(Mult Dev Label Chgs 8/Sep/2021)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRF6614(TR)PbF)
Simulation Models
1(IRF6614 Saber Model)
Product Drawings
()
Menge Preis
-
Stellvertreter
-