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TEILNUMMER DES HERSTELLERS
2SB1495,Q(M
BESCHREIBUNG
TRANS PNP 100V 3A TO220NIS
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 100 V 3 A 2 W Through Hole TO-220NIS
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 2A, 2V
Power - Max
2 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220NIS
Base Product Number
2SB1495
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2SB1495QM
2SB1495Q(M
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Toshiba Semiconductor and Storage 2SB1495,Q(M
Dokumente und Medien
Datasheets
1(2SB1495)
HTML Datasheet
1(2SB1495)
Menge Preis
-
Stellvertreter
Teil Nr. : TTB1020B,S4X(S
Hersteller. : Toshiba Semiconductor and Storage
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : Similar