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ChinaIRL3215
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TEILNUMMER DES HERSTELLERS
IRL3215
BESCHREIBUNG
MOSFET N-CH 150V 12A TO220AB
DETAILIERTE BESCHREIBUNG
N-Channel 150 V 12A (Tc) 80W (Tc) Through Hole TO-220AB
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
166mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
775 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
80W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
*IRL3215
SP001558002
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRL3215
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1(IRL3215)
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Menge Preis
-
Stellvertreter
Teil Nr. : IRFB4019PBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 1,759
Einzelpreis. : $1.94000
Ersatztyp. : Similar
Verfügbare Menge. : 1,759
Einzelpreis. : $1.94000
Ersatztyp. : Similar