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ChinaBSP125 E6327
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSP125 E6327
BESCHREIBUNG
MOSFET N-CH 600V 120MA SOT223-4
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 120mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
45Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id
2.3V @ 94µA
Gate Charge (Qg) (Max) @ Vgs
6.6 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223-4
Package / Case
TO-261-4, TO-261AA
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
BSP125E6327T
BSP125E6327
SP000011100
BSP125 E6327-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSP125 E6327
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1(BSP125)
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Menge Preis
-
Stellvertreter
Teil Nr. : BSP125H6327XTSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 28,380
Einzelpreis. : $0.91000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 28,380
Einzelpreis. : $0.91000
Ersatztyp. : Parametric Equivalent