Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IXFT16N120P-TRL
BESCHREIBUNG
MOSFET N-CH 1200V 16A TO268
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 16A (Tc) 660W (Tc) Surface Mount TO-268
HERSTELLER
IXYS
STANDARD LEADTIME
52 Weeks
EDACAD-MODELL
STANDARDPAKET
400

Technische Daten

Mfr
IXYS
Series
HiPerFET™, Polar
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
950mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
6900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
660W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-268
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Base Product Number
IXFT16

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

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Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFT16N120P-TRL

Dokumente und Medien

Environmental Information
1(Ixys IC REACH)

Menge Preis

QUANTITÄT: 400
Einzelpreis: $15.15823
Verpackung: Tape & Reel (TR)
MinMultiplikator: 400

Stellvertreter

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